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Enhanced single-photon emission in the near infrared from a diamond color center

Igor Aharonovich, Chunyuan Zhou, Alastair Stacey, Julius Orwa, Stefania Castelletto, David Simpson, Andrew D. Greentree, François Treussart, Jean-Francois Roch and Steven Prawer; Phys. Rev. B 79, 235316 (2009)

Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of an asyet uncharacterized nickel related complex in diamond, which has photophysical properties surpassing the two main-stay centers for single photon applications, namely the nitrogen vacancy and NE8 center. This center was fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond crystals. A possible correlation of the center to a Ni/Si complex is substantiated by a co-implantation of Ni and Si into a pure bulk diamond. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns.

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